Product Exhibition at IMS, Booth #2119
During the IMS2016 exhibition, Microsemi’s new devices, as well as other innovative products from the company, will be on display in booth #2119 for engineers, system architects and researchers interested in technologies that would differentiate their new designs. Products to be showcased include:
GaN HEMT RF Power Transistors and Drivers Cover L-Band to 750 Watts
Microsemi’s expanding family of RF power transistors based on gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) technology includes six new L-band RF power transistors and drivers rated between 120 watts (W) and 750W. The new 1214GN-750V, 1214GN-120E/EL/EP, 1011GN-125E/EL/EP, 1011GN-250E/EL/EP, 1416GN-600V, and 1416GN-120E/EL/EP RF power transistors and drivers deliver outstanding size, weight, power and efficiency performance in a wide range of radar, avionics and communications applications with compact packaging options. For more information, visit http://www.microsemi.com/product-directory/power-transistor-products-si-bjt-mosfet-gan/3309-transistors-gallium-nitride#selection-table.
Monolithic SPST and SPDT PIN Switch Elements Deliver Up to 100W Through 6 GHz
Microsemi’s MPS2R10-606, MPS4103-607 and MPS2R11-608 are single-chip silicon monolithic series-shunt elements designed with minimal parasitic inductance to provide optimum insertion loss of less than 0.3 decibel (dB), 55 dB of isolation and 500 nanosecond (nS) switching times over the entire 100 MHz to 6 GHz frequency range. These products are ideal replacements for the conventional shunt mounted chip and series mounted beam lead PIN diode normally used in the manufacture of broadband microwave switches. Capable of switching up to 100W of continuous wave (CW) power, these devices are ideal for transmit/receive (T/R) and high power switching in military and commercial radio, radar and cellular infrastructure applications. These products meet RoHS requirements per EU directive 2002/95/EC. For more information, visit http://www.microsemi.com/product-directory/diodes-pin/1530-monolithic-series-shunt-hybrid.
New Series of Low Cost MELF PIN Diodes Feature 2 GHz Switching, 500V Breakdown Voltage
Microsemi has introduced UMX502-UMX812, a new series of low cost, metal electrode leadless face bonded (MELF) high power, ceramic PIN diodes. This series of PIN diodes are hermetically sealed, high reliability surface mount packaged devices with full face bonded chips and very low inductance construction. The MELF PIN diodes are ideal for a wide range of general purpose and broadband switching, attenuating and phase-shifting applications from high frequency through 2 GHz, as well as for use in MRI coil switching and other low magnetic applications. These RoHS-compliant products meet the requirements of EU directive 2002/95/EC, and are fully compatible with pick and place and solder reflow manufacturing techniques. UMX502-UMX812, are ESD HBM Class 2 products, and exhibit breakdown voltage ratings up to 500 volts (V). For more information visit http://www.microsemi.com/product-directory/surface-mount-pin-diodes/1823-melf-pin-diodes.
About Ultimate Performance MMICs
As a leader in MMIC products, Microsemi’s portfolio spans the DC to 65 GHz frequency range and targets a broad range of applications including those in electronic warfare, radars, test and measurement instrumentation, and microwave communications. The portfolio is based on high performance process technologies and comprises high power and low noise broadband amplifiers, amplifier modules, prescalers, attenuators and switches. Microsemi offers 20 distributed amplifier products. Microsemi’s prescalers combine higher frequency operation, the flexibility to divide by a large number of ratios and excellent residual phase noise. For more information, visit www.microsemi.com/MMICs.
Lowest Sleep State Current Sub-GHz Transceiver
Operating in the 779-965 megahertz (MHz) unlicensed industrial, scientific and medical (ISM) frequency bands, Microsemi’s ZL70550 consumes only 2.8 milliamps (mA) while transmitting at -10 decibel-milliwatts (dBm) output power and a similar 2.5 mA during reception. It offers an extremely low sleep state current of 10 nanoamperes (nA), making it ideal for low-duty cycle applications. Microsemi addresses the high cost of battery replacement issues common with medical and industrial customers by leveraging the intellectual property from its ultra-low power implantable pacemakers and hearing aids to provide the lowest power wireless link in an extremely small form factor that is easy to deploy. For more information, visit http://www.microsemi.com/products/ultra-low-power-wireless/sub-ghz-radio-transceivers/zl70550.
Wi-Fi High-Linearity Power Amplifiers and Front-End Modules
Microsemi has an expanding portfolio of world-class customer premise equipment (CPE) products for Wi-Fi 802.11 a/b/g/n/ac applications. Designed for medium power applications, Microsemi’s new 5 GHz and 2 GHz single band front-end modules (FEMs) are optimized for long packet EVM performance ideally suited for wireless client set-top box, gateway, and 4K ultra high-definition (HD) platforms. Where cost and size are critical, a dual-band (5GHz/2GHz) FEM will be offered in compact 4 mm x 3 mm 28 pin QFN package, using 3.3V supply, ideal for smart television and over-the-top (OTT) content platforms.
Microsemi offers a family of high-linearity power amplifiers, featuring the latest in 2 GHz amplifiers, delivering +23 dBm of linear power with market leading current consumption, critical for thermal management for today’s newer 4 x 4 and 8 x 8 multiuser multiple input, multiple output (MIMO) platforms. For more information, visit http://www.microsemi.com/product-directory/rf-microwave-a-millimeter-wave/3593-wlan-rfics.
The Microsemi products displayed at IMS2016 are available now. For product sales or technical information, contact email@example.com.
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 4,800 employees globally. Learn more at www.microsemi.com.
Microsemi and the Microsemi logo are registered trademarks or service marks of Microsemi Corporation and/or its affiliates. Third-party trademarks and service marks mentioned herein are the property of their respective owners.
“Safe Harbor” Statement under the Private Securities Litigation Reform Act of 1995: Any statements set forth in this news release that are not entirely historical and factual in nature, including without limitation statements related to featuring 15 new products from its radio frequency (RF), millimeter wave integrated circuits (ICs), monolithic microwave integrated circuits (MMICs), ultra-low power sub-GHz transceivers and high performance WLAN monolithic RFICs portfolio at the 2016 IEEE MTT-S International Microwave Symposium (IMS2016) and Exhibition held at the Moscone Center in San Francisco, CaliforniaMay 22-27, 2016, and its potential effects on future business, are forward-looking statements. These forward-looking statements are based on our current expectations and are inherently subject to risks and uncertainties that could cause actual results to differ materially from those expressed in the forward-looking statements. The potential risks and uncertainties include, but are not limited to, such factors as rapidly changing technology and product obsolescence, potential cost increases, variations in customer order preferences, weakness or competitive pricing environment of the marketplace, uncertain demand for and acceptance of the company’s products, adverse circumstances in any of our end markets, results of in-process or planned development or marketing and promotional campaigns, difficulties foreseeing future demand, potential non-realization of expected orders or non-realization of backlog, product returns, product liability, and other potential unexpected business and economic conditions or adverse changes in current or expected industry conditions, difficulties and costs of protecting patents and other proprietary rights, inventory obsolescence and difficulties regarding customer qualification of products. In addition to these factors and any other factors mentioned elsewhere in this news release, the reader should refer as well to the factors, uncertainties or risks identified in the company’s most recent Form 10-K and all subsequent Form 10-Q reports filed by Microsemi with the SEC. Additional risk factors may be identified from time to time in Microsemi’s future filings. The forward-looking statements included in this release speak only as of the date hereof, and Microsemi does not undertake any obligation to update these forward-looking statements to reflect subsequent events or circumstances.
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SOURCE Microsemi Corporation